? 2011 ixys corporation, all rights reserved features z high blocking voltage z low switching losses z high current handling capability z anti-parallel diode advantages z high power density z low gate drive requirement applications z switch-mode and resonant-mode power supplies z uninterrupted power supplies (ups) z capacitor discharge circuits z laser generators ds99832b(08/11) high voltage, high gain bimosfet tm monolithic bipolar mos transistor IXBK64N250 ixbx64n250 v ces = 2500v i c110 = 64a v ce(sat) 3.0v symbol test conditions maximum ratings v ces t j = 25c to 150c 2500 v v cgr t j = 25c to 150c, r ge = 1m 2500 v v ges continuous 25 v v gem transient 35 v i c25 t c = 25 c (chip capability) 156 a i lrms lead current limit, rms 120 a i c100 t c = 110c 64 a i cm t c = 25c, 1ms 600 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 160 a (rbsoa) clamped inductive load v ce < 0.8 ? v ces t sc v ge = 15v, t j = 125c, (scsoa) r g = 5 , v ce = 1250v, non-repetitive 10 s p c t c = 25c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (to-264 ) 1.13/10 nm/lb.in. f c mounting force (plus247 ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 2500 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 50 a t j = 125 c 6 ma i ges v ce = 0v, v ge = 25v 200 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.5 3.0 v t j = 125 c 3.1 v g = gate c = collector e = emitter tab = collector plus247 tm (ixbx) to-264 (ixbk) e g c tab tab g c e
IXBK64N250 ixbx64n250 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max v f i f = i c110 , v ge = 0v, note 1 3.0 v t rr 160 ns i rm 480 a i f = i c110 , v ge = 0v, -di f /dt = 650a/ s v r = 600v, v ge = 0v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 40 72 s c ies 8900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 345 pf c res 118 pf q g 400 nc q ge i c = i c110 , v ge = 15v, v ce = 600v 46 nc q gc 155 nc t d(on) 49 ns t r 318 ns t d(off) 232 ns t f 170 ns t d(on) 54 ns t r 578 ns t d(off) 222 ns t f 175 ns r thjc 0.17 c/w r thcs 0.15 c/w resistive switching times, t j = 125c i c = 128a, v ge = 15v, tp = 1 s v ce = 1250v, r g = 1 resistive switching times, t j = 25c i c = 128a, v ge = 15v, tp = 1 s v ce = 1250v, r g = 1 note 1: pulse test, t 300 s, duty cycle, d 2%. additional provisions for lead-to-lead isolation are required at v ce >1200v. to-264 outline plus247 tm outline terminals: 1 - gate 2 - collector 3 - emitter 4 - collector terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2011 ixys corporation, all rights reserved IXBK64N250 ixbx64n250 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. output characteristics @ t j = 125oc 0 30 60 90 120 150 180 210 240 270 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes 10v v ge = 25v 20v 15v 5v fig. 3. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 256a i c = 64a i c = 128a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 256a 128a 64a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 5. breakdown & threshold voltages vs. junction temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -55 -35 -15 5 25 45 65 85 105 125 t j - degrees centigrade bv ces & v ge( th ) - normalized bv ces v ge( th )
IXBK64N250 ixbx64n250 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens 25oc t j = - 40oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 600v i c = 64a i g = 10ma fig. 11. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 8. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 v f - volts i f - amperes t j = 125oc t j = 25oc fig. 12. forward-bias safe operating area 1 10 100 1000 1 10 100 1,000 10,000 v ce - volts i c - amperes t j = 150oc t c = 25oc single pulse 100s 1ms v ce( sat ) limit 25s
? 2011 ixys corporation, all rights reserved IXBK64N250 ixbx64n250 fig. 14. resistive turn-on rise time vs. drain current 200 250 300 350 400 450 500 550 600 650 60 80 100 120 140 160 180 200 220 240 260 i c - amperes t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 450 500 550 600 650 700 750 800 12345678910 r g - ohms t r - nanoseconds 45 50 55 60 65 70 75 80 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 256a i c = 64a i c = 128a fig. 16. resistive turn-off switching times vs. junction temperature 160 170 180 190 200 210 220 230 240 250 260 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 150 165 180 195 210 225 240 255 270 285 300 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1250v i c = 128a, 256a i c = 64a fig. 17. resistive turn-off switching times vs. drain current 140 170 200 230 260 290 320 350 60 80 100 120 140 160 180 200 220 240 260 i c - amperes t f - nanoseconds 150 170 190 210 230 250 270 290 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 250 300 350 400 450 500 550 600 650 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 1250v i c = 256a, 128a, 64a fig. 18. resistive turn-off switching times vs. gate resistance 50 100 150 200 250 300 350 400 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 t d ( o f f ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 64a, 128a, 256a
IXBK64N250 ixbx64n250 ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: b_64n250(9p)8-12-11b fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
